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1 CGHV1F006S 6 w, dc - 15 ghz, 40v, gan hemt crees CGHV1F006S is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt) designed speciically for high eficiency, high gain and wide bandwidth capabilities. the device can be deployed for l, s, c, x and ku-band ampliier applications. the datasheet speciications are based on a c-band (5.5 - 6.5 ghz) ampliier. additional application circuits are available for c-band at 5.8 ghz - 7.2 ghz and x-band at 7.9 - 8.4 ghz and 8.5 - 9.6 ghz. the CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-lat-no-lead (dfn) package. under reduced power, the transistor can operate below 40v to as low as 20v v dd, maintaining high gain and eficiency. package type: 3x4 dfn pn: CGHV1F006S rev 5.2 C september 2019 features for 40 v in CGHV1F006S-amp ? up to 15 ghz operation ? 8 w typical output power ? 17 db gain at 6.0 ghz ? 15 db gain at 9.0 ghz ? application circuits for 5.8 - 7.2 ghz, 7.9 - 8.4 ghz, and 8.5 - 9.6 ghz. ? high degree of apd and dpd correction can be applied typical performance 5.5-6.5 ghz (t c = 25?c) , 40 v parameter 5.5 ghz 6.0 ghz 6.5 ghz units small signal gain 15.4 16.5 17.8 db output power @ p in = 28 dbm 38.6 39.3 39.0 dbm drain eficiency @ p in = 28 dbm 55 57 52 % note: measured in the CGHV1F006S-amp application circuit. pulsed 100 s 10% duty. listing of available hardware application circuits / demonstration circuits application circuit operating frequency ampliier class operating voltage CGHV1F006S-amp1 5.85 - 7.2 ghz class a/b 40 v CGHV1F006S-amp2 7.9 - 8.4 ghz class a/b 40 v CGHV1F006S-amp3 8.5 - 9.6 ghz class a/b 40 v CGHV1F006S-amp4 4.9 - 5.9 ghz class a/b 20 v downloaded from: http:/// subject to change without notice. www.cree.com/rf
2 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes drain-source voltage v dss 120 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 1.2 ma 25?c maximum drain current 1 i dmax 0.95 a 25?c soldering temperature 2 t s 245 ?c case operating temperature 3,4 t c -40, +150 ?c thermal resistance, junction to case 5 r jc 14.5 ?c/w 85?c note:1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 simulated at p diss = 2.4 w 4 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the pa ckage. the pcb will add additional thermal resistance. 5 the r th for crees application circuit, CGHV1F006S-amp, with 31 (?11 mil) via holes designed on a 20 mil th ick rogers 5880 pcb, is 3.9 c/w. the total r th from the heat sink to the junction is 14.5 c/w + 3.9 c/w = 18.4 c/w. electrical characteristics (t c = 25?c) - 40 v typical characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.6 -3.0 -2.4 v dc v ds = 10 v, i d = 1.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 40 v, i d = 60 ma saturated drain current 2 i ds 0.86 1.2 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v (br)dss 100 C C v dc v gs = -8 v, i d = 1.2 ma rf characteristics 3 (t c = 25 ? c, f 0 = 5.925 ghz unless otherwise noted) small signal gain 3,4 g 15.15 17.4 - db v dd = 40 v, i dq = 60 ma, p in = 10 dbm output power 3,4 p out 37.5 38.7 C dbm v dd = 40 v, i dq = 60 ma, p in = 25.5 dbm drain eficiency 3,4 35 52 - % v dd = 40 v, i dq = 60 ma, p in = 25.5 dbm output mismatch stress 4 vswr - 10 : 1 - y no damage at all phase angles, v dd = 40 v, i dq = 60 ma, p in = 25.5 dbm dynamic characteristics input capacitance 5 c gs C 1.3 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz output capacitance 5 c ds C 0.31 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.04 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz notes:1 measured on wafer prior to packaging 2 scaled from pcm data 3 measured in crees production test ixture. this ixture is designed for high volume testing at 5.925 ghz 4 unmodulated pulsed signal 100 s, 10% duty cycle 5 includes package downloaded from: http:///
3 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. electrical characteristics when tested in CGHV1F006S-amp1 at c-band under oqpsk characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 5.8 - 7.2 ghz unless otherwise noted) gain g C 17.5 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 39 C dbm v dd = 40 v, i dq = 60 ma, p in = 27 dbm drain eficiency 2 C 55 - % v dd = 40 v, i dq = 60 ma, p in = 27 dbm oqpsk 3 aclr - -36 - dbc v dd = 40 v, i dq = 60 ma, p out = 33 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v ds = 40 v, i dq = 60 ma notes:1 measured in CGHV1F006S-amp1 application circuit 2 pulsed 100 s, 10% duty cycle 3 oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2 offset = 1.6 mhz typical performance - CGHV1F006S-amp1 at c-band under oqpsk figure 1. - typical small signal response of CGHV1F006S-amp1 application circuit v dd = 40 v, i dq = 60 ma 0 10 20 30 magnitude (db) -30 -20 -10 5.0 5.5 6.0 6.5 7.0 7.5 8.0 m frequency (ghz) s11 s21 s22 downloaded from: http:///
4 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp1 figure 2. - typical gain, eficiency and oqpsk performance vs frequency p out = 33 dbm. v dd = 40 v, i dq = 60 ma figure 3. - typical gain, eficiency and oqpsk performance vs input power oqpsk transfer frequency = 7.2 ghz, v dd = 40 v, i dq = 60 ma -30 -25 -20 -15 20 25 30 35 k offset (dbc) gain (db) efficiency (%) deff gain_ -oset_ +oset_ -50 -45 -40 -35 0 5 10 15 10 15 20 25 30 35 oqpsk off gain efficie input power (dbm) eficiency gain offset eficiency gain oset -20 -15 -10 -5 0 20 25 30 35 40 psk offset (dbc) in (db) and efficiency (%) efficiency gain offset -40 -35 -30 -25 0 5 10 15 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 oqpsk gain (db frequency (ghz) offset gain eficiency downloaded from: http:///
5 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp1 figure 4. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 27 dbm CGHV1F006S-amp1 application circuit bill of materials, oqpsk designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c1, c14 cap, 1.8 pf, 0.1 pf, 0603, atc 2 c2 cap, 2.0 pf, 0.1 pf, 0402, atc 1 c3, c8 cap, 1.5 pf, 0.1 pf, 0402, atc 2 c4 cap, 10 pf, 5%, 0603, atc 1 c5, c10 cap, 470 pf, 5%, 100 v, 0603, x 2 c6, c11 cap, 33000 pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 pcb, rt5880, 0.020 thk, CGHV1F006S 1 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor CGHV1F006S 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 drain efficiency (%) utput power (dbm) 35 40 45 50 36.0 36.5 37.0 37.5 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.10 7.30 drain outpu frequency (ghz) output power drain efficiency CGHV1F006S-amp1 application circuit downloaded from: http:///
6 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGHV1F006S-amp1 application circuit schematic, oqpsk CGHV1F006S-amp1 application circuit outline, oqpsk c3 1.5 pf c6 0.033 c710 c9 20 pf c10 470 pf c13 33 c4 10 pf c14 1.8 pf c11 0.033 c12 1 1 2 3 q1 c1 1.8 pf c8 1.5 pf r2 100 ohm c5 470 pf c2 2.0 pf r1 15 ohm 12345 j3 j1 j2 vd=+40v gnd vg=-2.0v to -3.5v tp 5 4 3 2 1 downloaded from: http:///
7 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. electrical characteristics when tested in CGHV1F006S-amp2 at x-band, satcom characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 7.9 - 8.4 ghz unless otherwise noted) gain g C 15 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 39 C dbm v dd = 40 v, i dq = 60 ma, p in = 28 dbm drain eficiency 2 C 55 - % v dd = 40 v, i dq = 60 ma, p in = 28 dbm oqpsk 3 aclr - -37 - dbc v dd = 40 v, i dq = 60 ma, p out = 33 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v dd = 40 v, i dq = 60 ma, p in = 28 dbm notes:1 measured in CGHV1F006S-amp2 application circuit 2 pulsed 100 s, 10% duty cycle 3 oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2 offset = 1.6 mhz typical performance in application circuit CGHV1F006S-amp2 at x-band, satcom figure 5. - typical small signal response of CGHV1F006S-amp2 application circuit v dd = 40 v, i dq = 60 ma 0 10 20 30 magnitude (db) -30 -20 -10 7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 ma frequency (ghz) s21 s11 s22 downloaded from: http:///
8 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp2 figure 6. - typical oqpsk response v dd = 40 v, i dq = 60 ma, 1.6 msps, p out = 33 dbm typical performance in application circuit CGHV1F006S-amp2 figure 7. - oqpsk transfer response v dd = 40 v, i dq = 60 ma, 1.6 msps, frequency = 8.4 ghz p out - 35 -34 -33 -32 -31 -30 15 20 25 30 35 40 aclr (dbc) (db) & drain efficiency (%) gain drain efficiency aclr -38 -37 -36 - 35 0 5 10 15 7.90 7.95 8.00 8.05 8.10 8.15 8.20 8.25 8.30 8.35 8.40 gain (db) frequency (ghz) aclr gain drain eficiency -30 -25 -20 -15 -10 15 20 25 30 35 oqpsk offset (dbc) ) and drain efficiency (%) gain eff -oset +oset -45 -40 -35 0 5 10 15 20 25 30 35 40 oqps gain (db) and output power (dbm) downloaded from: http:///
9 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp2 figure 8. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 28 dbm CGHV1F006S-amp2 application circuit bill of materials, satcom designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c3, c8 cap, 1.0pf, 0.05 pf, 0402, atc 2 c14 cap, 1.0pf, 5%, 0603, atc 1 c1 cap, 1.2pf, 5%, 0603, atc 1 c2 cap, 1.6pf, 5%, 0402, atc 1 c4 cap, 10pf, 5%, 0603, atc 1 c5, c10 cap, 470pf, 5%, 100v, 0603, x 2 c6,c11 cap, 33000pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 pcb, rt5880, 0.020 thk, CGHV1F006S 1 baseplate, al, 2.60 x 1.70 x 2.50 1 j3 header rt>plz .1cen lk 5pos 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 q1 qfn transistor CGHV1F006S 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 drain efficiency (%) utput power (dbm) 35 40 45 50 36.0 36.5 37.0 37.5 7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50 drain outpu frequency (ghz) output power drain efficiency drain eficiency output power CGHV1F006S-amp2 application circuit downloaded from: http:///
10 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGHV1F006S-amp2 application circuit schematic, satcom CGHV1F006S-amp2 application circuit outline, satcom downloaded from: http:///
11 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. electrical characteristics when tested in CGHV1F006S-amp3 at x-band, radar characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 8.5 - 9.6 ghz unless otherwise noted) gain g C 14.5 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 38.5 C dbm v dd = 40 v, i dq = 60 ma, p in = 28 dbm drain eficiency 2 C 52 - % v dd = 40 v, i dq = 60 ma, p in = 28 dbm output mismatch stress 2 vswr C 10 : 1 C y v dd = 40 v, i dq = 60 ma, p in = 28 dbm notes:1 measured in CGHV1F006S-amp3 application circuit 2 pulsed 100 s, 10% duty cycle typical performance in application circuit CGHV1F006S-amp3 at x-band, radar figure 9. - typical small signal response v dd = 40 v, i dq = 60 ma 0 10 20 30 magnitude (db) -30 -20 -10 7.5 8.0 8.5 9.0 9.5 10.0 10.5 mag frequency (ghz) s21 s11 s22 downloaded from: http:///
12 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp3 figure 10. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 28 dbm CGHV1F006S-amp3 application circuit bill of materials, radar designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c1, c14 cap, 1.0 pf, 0.05 pf, 0603, atc 2 c2 cap, 1.0 pf, 0.05 pf, 0402, atc 1 c3, c8 cap, 0.8 pf, 0.05 pf, 0402, atc 2 c4 cap, 10 pf, 5%, 0603, atc 1 c5, c10 cap, 470 pf, 5%, 100 v, 0603, x 2 c6, c11 cap, 33000 pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor CGHV1F006S 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 drain efficiency (%) tput power (dbm) 35 40 45 50 36.0 36.5 37.0 37.5 8.4 8.6 8.8 9.0 9.2 9.4 9.6 drain output frequency (ghz) output power drain efficiency drain eficiency output power CGHV1F006S-amp3 application circuit downloaded from: http:///
13 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGHV1F006S-amp3 application circuit schematic, radar CGHV1F006S-amp3 application circuit outline, radar c3 0.8 pf c6 0.033 c710 c9 20 pf c10 470 pf c13 33 c4 10 pf c14 1.0 pf c11 0.033 c12 1 1 2 3 q1 c1 1.0 pf c8 0.8 pf r2 100 ohm c5 470 pf c2 1.0 pf r1 15 ohm 12345 j3 j1 j2 vd=+40v gnd vg=-2.0v to -3.5v tp 5 4 3 2 1 downloaded from: http:///
14 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. electrical characteristics when tested in CGHV1F006S-amp4 at 802.11 characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 4.9 - 5.9 ghz unless otherwise noted) gain g C 13 - db v dd = 20 v, i dq = 30 ma, p in = 27 dbm drain eficiency 2 C 27 - % v dd = 20 v, i dq = 30 ma, p in = 27 dbm oqpsk 3 aclr - -43 - dbc v dd = 20 v, i dq = 30 ma, p out = 27 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v dd = 20 v, i dq = 30 ma, p in = 27 dbm notes:1 measured in CGHV1F006S-amp4 application circuit 2 single carrier wcdma, 3gpp test model 1, g4 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf typical performance - CGHV1F006S-amp4 at 802.11 figure 11. - typical small signal response v dd = 20 v, i dq = 30 ma - 5 0 5 10 15 agnitude (db) -20 -15 -10 - 5 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 magni frequency (ghz) s11 s21 s22 downloaded from: http:///
15 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance in application circuit CGHV1F006S-amp4 figure 12. - typical gain, eficiency and wcdma performance vs frequency v dd = 20 v, i dq = 30 ma, p out = 27 dbm CGHV1F006S-amp4 application circuit bill of materials at 802.11 designator description qty r1, r3 res, 1, ohm, +/-1%, 1/16 w, 0402 2 r2 res, 51.1, ohm, +/-1%, 1/16w, 0603 1 c2, c6, c11 cap, 1.8 pf, +/-0.1 pf, 0603, atc 3 c1 cap, 0.2 pf, +/-0.05 pf, 0402, atc 1 c3, c7, c12 cap, 470 pf, 5%, 100 v, 0603, x 3 c4, c8, c13 cap, 33000 pf, 0805, 100 v, x7r 3 c5 cap, 10 uf, 16 v, tantalum 1 c15 cap, 6.8 pf, 0.25 pf, 100 v, 0603 1 c9, c14 cap, 1.0 uf, 100v, 10% x7r, 1210 2 c10 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 pcb, rt5880, 0.020 thk, CGHV1F006S 1 baseplate, cgh35015, 2.60 x 1.7 1 j3 header rt>plz .1cen lk 5pos 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 q1 qfn transistor CGHV1F006S 1 -41 -40 -39 -38 -37 20 25 30 35 40 aclr (dbc) & drain efficiency (%) gain drain efficiency aclr -45 -44 -43 -42 0 5 10 15 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 ac gain (db) & dr frequency (ghz) aclr gain drain eficiency CGHV1F006S-amp4 application circuit downloaded from: http:///
16 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGHV1F006S-amp4 application circuit schematic CGHV1F006S-amp4 application circuit outline eficiency gain offset downloaded from: http:///
17 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGHV1F006S power dissipation de-rating curve figure 13. - CGHV1F006S transient power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). electrostatic discharge (esd) classiications parameter symbol class test methodology human body model hbm 1b ( 500 v) jedec jesd22 a114-d charge device model cdm ii ( 200 v) jedec jesd22 c101-c 6 8 10 12 r dissipation (w) 0 2 4 0 25 50 75 100 125 150 175 200 225 250 power dis maximum casetemperature ( c) note 1 downloaded from: http:///
18 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. source and load impedances frequency (ghz) z source z load 1 49.67 + j32.81 184.11 + j6.66 3 11.54 + j3.96 38.83 + j56.37 6 5.94 - j17.97 13.03 + j16.16 10 11.87 - j77.62 11.79 - j17.43 12 47.42 - j205.35 16.39 - j46.22 15 33.78 + j251.03 163.61 - j268.44 note 1 : v dd = 40 v, i dq = 60 ma note 2 : impedances are extracted from source and load pull data derived from the transistor. d z source z load g s downloaded from: http:///
19 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product dimensions CGHV1F006S (package 3 x 4 dfn) pin input/output 1 gnd 2 nc 3 rf in 4 rf in 5 nc 6 gnd 7 gnd 8 nc 9 rf out 10 rf out 11 nc 12 gnd note: leadframe inish for 3x4 dfn package is nickel/palladium/gold. gold is the outer layer. downloaded from: http:///
20 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. part number system parameter value units upper frequency 1 15.0 ghz power output 6 w package surface mount - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage CGHV1F006S downloaded from: http:///
21 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product ordering information order number description unit of measure image CGHV1F006S gan hemt each CGHV1F006S-amp1 test board with gan hemt installed, 5.85 - 7.2 ghz, 50 v c-band under oqpsk each CGHV1F006S-amp2 test board with gan hemt installed, 7.9 - 8.4 ghz, 28 v x-band satcom each CGHV1F006S-amp3 test board with gan hemt installed, 8.5 - 9.6 ghz, 28 v x-band radar each CGHV1F006S-amp4 test board with gan hemt installed, 4.9 - 5.9 ghz, 50 v 802.11 each CGHV1F006S-tr delivered in tape and reel 250 parts / reel downloaded from: http:///
22 CGHV1F006S rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf copyright ? 2013 - 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. disclaimer speciications are subject to change without notice. cree, inc. believes the information contained wi thin this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent ri ghts of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. t ypical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these va lues can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components i n applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cre e product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear fa cility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 rfsales@cree.com www.cree.com/rf downloaded from: http:///

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